Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.
Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 12 A Collector Current (Pulse) ICP 36 A Collector Dissipation PC Tc=25°C 85 W